RFMW Ltd. announces design and sales support for a plastic GaN transistor from Qorvo. The TGF2977-SM provides 5 W of saturated power from 8 to 12 GHz for various applications including marine and weather radar, military radar and avionics. Operational to very low frequency, the recommended bias voltage is 32 V. The TGF2977-SM provides >50% PAE and small signal gain of >13 dB at mid X-band frequencies.

Offered in a low cost, low thermal resistance, plastic, QFN package measuring 3 x 3 mm, this transistor is capable of supporting CW and pulse operation.