Wolfspeed, A Cree Company, announced that its GaN-on-SiC RF power transistors have completed testing to demonstrate compliance with NASA reliability standards for satellite and space systems. Wolfspeed’s proven GaN-on-SiC fabrication processes have demonstrated industry-leading reliability and performance, delivering more than 100 billion total hours of field operation with a best-in-class FIT rate of less than-5-per billion device hours for discrete GaN RF transistors and multi-stage GaN MMICs.
Wolfspeed partnered with KCB Solutions, a recognized leader in RF and microwave components to conduct a comprehensive testing program to demonstrate that Wolfspeed’s GaN-on-SiC devices meet NASA EEE-INST-002 Level 1 reliability and performance standards, derived from the MIL-STD requirements for Class S and Class K qualifications.
“This successful testing demonstrates that Wolfspeed’s GaN foundry process is capable of producing devices that meet these demanding reliability standards. Our customers now have the ability to specify our GaN RF devices in the most critical aerospace, military, and satellite electronics systems,” said Jim Milligan, RF and microwave director, Wolfspeed. “Our proven GaN-on-SiC technology enables design engineers to make smaller, lighter, more efficient, and more reliable solid-state power amplifiers than are possible with conventional traveling wave tube (TWT) amplifiers or those designed with gallium arsenide (GaAs) devices. Now, aerospace designers can achieve higher performance radar and communications systems with a significantly lighter payload and longer operating life."
“As an AS9100-certified facility with an extensive history of supplying Class S and Class K devices for aerospace and satellite electronic systems, KCB Solutions implemented a comprehensive testing program in conjunction with Wolfspeed to ensure that their GaN process was capable of producing devices that meet these demanding NASA standards,” said Ralph Nilsson, president, KCB Solutions. “This testing regime was derived from the established MIL-STD qualification requirements of Class S and Class K, and included evaluation for ESD, intrinsic reliability, SEM analysis, and radiation hardness.”
The testing program consisted of five test procedures conducted by KCB Solutions on Wolfspeed’s 25W GaN-on-SiC HEMT CGH40025F and their 25W 2-Stage X-Band GaN MMIC CMPA801B025F devices, which are produced using the company’s proven 0.4µm G28V3 fabrication process. Both devices demonstrated no significant RF performance change after undergoing all the test procedures, including exposure to a cumulative dose of radiation exceeding 1Mrad.
Virtually all space and satellite equipment manufacturers require electronic components to meet established high-reliability military qualification standards in order to be specified into their communications and radar systems. These standards include MIL- PRF-38535 Class S for single chips, and MIL-PRF38534 Class K for multichip modules. Wolfspeed’s collaboration with KCB Solutions allows them to upscreen their GaN devices to ensure they are in compliance with the NASA EEE-INST-002 level 1 standards based on these Class S and Class K requirements. As a result of this successful testing at KCB Solutions, several companies have already specified Wolfspeed’s GaN devices for their space applications.
Wolfspeed is a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs). As the largest American producer of GaN-on-SiC RF wafer processing technology, Wolfspeed’s GaN HEMTs and MMICs enable enhanced innovation, performance, and efficiency across a broad spectrum of RF and microwave applications for both the commercial and military sectors. For more information about Wolfspeed’s RF components and foundry services, please visit wolfspeed.com/RF or contact Ryan Baker, RF marketing manager Wolfspeed, at ryan.baker@wolfspeed.com or 919-407-7816.