DEVICES
Zero-bias Schottky Diode
The model ASI-3486 zero-bias Schottky diode is designed as a replacement part for the recently discontinued Hewlett-Packard model HSCH-3486 and M/A-COM model MA4E928B-54 zero-bias units. The silicon diode features hermetic glass packaging and is designed for high sensitivity applications up to 10 GHz. The unit provides true zero-bias operation with a Tss of -54 dBm and addresses application requirements for power sensors in built-in test equipment, automatic gain control detectors and LO starved mixers.
Advanced Semiconductor Inc. (ASI),
North Hollywood, CA
(818) 982-1200.
100 W GaAs MESFET
The model NES1823P-100 twin-transistor device consists of two pairs of GaAs MESFET chips that can be externally combined in either a push-pull or balanced configuration. The unit is designed for 2.1 to 2.2 GHz base stations, but can also be used in 2.3 to 2.4 GHz WLL and Digital Audio Broadcast applications with modifications to the external matching circuit. The device delivers 100 W CW with high linear gain of 11 dB (typ), high efficiency and good linearity.
California Eastern Laboratories (CEL),
Santa Clara, CA
(408) 988-3500.