Analog Devices, Inc. introduced the HMC1127 and the HMC1126 (Monolithic Microwave Integrated Circuit) distributed power amplifiers. Covering the frequency range of 2 to 50 GHz, these new power amplifier die simplify system design and improve performance by eliminating the need for RF switches between frequency bands. Each amplifier incorporates I/Os that are internally matched to 50 Ohms, facilitating easy integration into multi-chip modules. All data is taken with the chips connected via two 0.02-mm (1 mil) wire bonds measuring 0.31-mm (12 mils) in length. Based on a GaAs (gallium-arsenide) pHEMT (pseudomorphic high-electron mobility transistor) design, the HMC1126 and HMC1127 are ideal for instrumentation, microwave radio and VSAT antennas, aerospace and defense systems, telecommunications infrastructure, and fiber optic applications.

• Download data sheet, order samples and evaluation boards

             http://www.analog.com/HMC1126

             http://www.analog.com/HMC1127

• Register for the distributed amplifier webcast:

             https://webinar.techonline.com/19992?keycode=CAA1GC

• Connect with engineers and ADI product experts on EngineerZone®, an online technical support community:

              https://ez.analog.com/community/hittite-microwave-and-analog-devices-support-collaboration-group

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HMC1127 GaAs pHEMT MMIC Distributed Power Amplifier Key Features:

• P1dB output power: 12.5 dBm
• Psat output power: 17.5 dBm
• Gain: 14.5 dB
• Output IP3: 23 dBm
• Supply voltage: +5 V @80 mA
• 50 Ohm matched I/O
• Die size: 2.7 x 1.45 x 0.1 mm

HMC1126 GaAs pHEMT MMIC Distributed Power Amplifier Key Features:

• P1dB output power: 17.5 dBm
• Psat output power: 21 dBm
• Gain: 11 dB
• Output IP3: 28 dBm
• Supply voltage: +5 V@65 mA
• 50 Ohm matched I/O
• Die size: 2.3 x 1.45 x 0.1 mm

Pricing and Availability