RFMW Ltd. announces design and sales support fortwo 45 W GaN on SiC transistors from TriQuint. The T1G4004532-FL (flanged) and T1G4004532-FS (earless) are wideband, DC to 3.5 GHz devices offering 17 dB of gain, nearly twice that of competing GaN devices.

Both transistors are input matched for S-band operation and both the T1G4004532-FL and T1G4004532-FS operate from a 32 V supply. Manufactured on TriQuint’s TQGan25 process, the devices utilize a low thermal resistance base material and are housed in industry standard packaging for use in Radar, EW and general purpose, wideband applications.