Richardson RFPD Inc. announced the availability and full design support capabilities for two new gallium nitride on silicon carbide (GaN on Sic) from TriQuint.

The TGA2216-SM is a wideband cascode amplifier that offers exceptional wideband performance and also supports 40V operation. It operates from 0.1 to 3.0 GHz and provides greater than 10W of saturated output power with greater than 13 dB of large signal gain and greater than 40% power-added efficiency.

The TGA2237-SM is a wideband distributed amplifier that operates from 0.03 to 2.5 GHz and provides greater than 10W of saturated output power with greater than 13 dB of large signal gain and greater than 50% power-added efficiency.

Both new devices are characterized for linear and continuous wave operation for use in military and commercial communication applications, as well as jammer and other electronic warfare applications. They are available in low-cost, surface mount, 32-lead, 5x5 mm AIN QFN packages. They are fully-matched to 50? at both RF ports, allowing for simple system integration. DC blocks are required on both RF ports, and the drain voltage must be injected through an off-chip bias-tee on the RF output port.

The devices are also available in die form: TGA2216 / TGA2237. Evaluation boards are available upon request.

The new GaN PAs are included in Richardson RFPD’s launch of the next generation of the TriQuint GaN Tech Hub, a micro-website featuring the latest news on GaN innovations and product releases from TriQuint. Recent additions to the Tech Hub include a white paper entitled ‘GaN Thermal Analysis for High-Performance Systems.’

To find more information, or to purchase these products today online, please visit the TGA2216-SM, TGA2237-SM, TGA2216 and TGA2237 webpages. The devices are also available by calling 1-800-737-6937 (within North America).