Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new line of high power GaN transistors in rugged, space-saving plastic packages from MACOM Technology Solutions (MACOM).

The new plastic-packaged GaN on SiC power transistors offer comparable reliability and are much lighter-weight compared to conventional ceramic-packaged GaN devices. The new devices include 90W, 50W and 15W transistors, available in standard 3 mm x 6 mm DFN packaging, as well as a 5W device in an even smaller SOT-89 package (2.5 mm x 4.5 mm). The devices offer wide frequency bandwidth, exceptionally high power added efficiency (PAE), and low overall power transistor size, cost and weight in a TRUE SMT™ plastic-package.

Internal stress buffers allow the devices to be reliably operated at up to 200 °C channel temperature. All of these transistors are capable of operating at frequencies up to 3.5 GHz, with the 5W device operating up to 4.0 GHz. The small package sizes and excellent RF performance make them ideal replacements for costly flanged or metal-backed module components.

Key features of the new MACOM High Power GaN in Plastic Packages include:

 The devices are in stock and available for immediate delivery. To find more information, or to purchase these products today on the Richardson RFPD website, please visit the MACOM High Power GaN in Plastic Packages webpage. The devices are also available by calling 1-800-737-6937 (within North America); or please find your local sales engineer (worldwide) at Local Sales Support. To learn more about additional products from MACOM, please visit the MACOM storefront webpage.