TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, has released two new dual matched low noise amplifiers that are ideally suited for balanced high performance RF design configurations. These integrated LNAs are highly linear and offer very low noise figures, high output and include automatic shut-down capability for use in Time Division Duplex (TDD) and Frequency-Domain Duplex (FDD) applications. They are excellent choices for use as first-stage LNAs in base station receivers, tower-mounted amplifiers and repeaters.

Technical Details:

TQP3M9039

 

700-1000 MHz GaAs pHEMT low-noise amplifier: 0.5dB noise figure; 38.8dB OIP3; 21dBm P1dB RF output power; single positive supply (4.35V at 57mA). Its dual-amplifier structure enables balanced operation; it provides adjustable bias (drain current and voltage) and integrated bias shut-down capability for FDD and TDD operation. Offered in a 4x4mm QFN pkg.

TQP3M9040

 

1500-2300 GHz GaAs pHEMT low-noise amplifier: 0.62dB noise figure; 39.8dB OIP3, 21dBm P1dB RF output power; single positive supply (4.4V at 57mA).  Its dual-amplifier structure enables balanced operation; it provides adjustable bias (drain current and voltage) and integrated bias shut-down capability for FDD and TDD operation. Offered in a 4x4mm QFN pkg.

 

 

 

 

 

 

 

 The new TQP3M9039 and TQP3M9040 are in full production; samples are available. Contact TriQuint for details or visit our sales web page for local assistance. Visit our website for product updates and to register for TriQuint’s quarterly newsletter.