High-Linearity Amplifier
Discover New Ways to Lower Power Consumption and Prevent Network System ESD, RF Over-Drive & DC Over-Voltage Failures
BALTIMORE, MARYLAND & HILLSBORO, OREGON - June 6, 2011 - TriQuint Semiconductor (NASDAQ: TQNT), a leading RF solutions supplier and technology innovator, has released the first members in a new family of integrated RF products that lower power consumption while protecting mobile networks from disruption and service failures. TriQuint's newest base transceiver station (BTS) network devices join 12 other new power and filter infrastructure solutions introduced in the first half of 2011.
"We listened to our customers in developing these products," said Vice President Brian P. Balut. "Consumer demand for smartphones and tablets means more bandwidth through the network. That leads to the requirement for greater linearity in the RF chain. At the same time, our customers want to minimize power consumption, and they want devices that withstand spikes and other stresses that may occur in the field. These two new products uniquely address all these needs."
TriQuint is focused on bringing performance innovation to essential building blocks in the global network. This network is fraught with demand, and it's not going to let up; by 2015, the amount of mobile data traffic contributed by tablets alone is expected to equal that of mobile data traffic from all devices combined in 2010.*
TriQuint's new base station devices, starting with the 0.25 Watt TQP7M9101, provides high gain and linearity with very low current consumption-just 88 mA (milliamps) in a typical 5 Volt design. The 0.5 Watt TQP7M9102 is also now available; it provides highly-linear performance, low current consumption and greater gain.
Setting these amplifiers apart from others now available is TriQuint's patent-pending integrated protection features that include means to guard against ESD and DC over-voltage electrical spikes. TriQuint also integrates RF over-drive protection that reduces the chance of damage from high signal levels often seen in systems employing digital pre-distortion linearization techniques commonly utilized to meet 3G/4G BTS system requirements. Unlike other linear driver amplifiers available today, TriQuint's TQP7M9101 also integrates matching circuits that eliminate the need externally. These integration benefits reduce the overall BOM and provide easier-to-use solutions that are especially important when fast time-to-market is a key manufacturer strategy.
"TriQuint regularly releases new amplifier and linear gain blocks that offer useful improvements. They appreciate that design requirements change all the time," said Alexander Kopp, RF designer, Andrew Wireless Systems / CommScope, Buchdorf, Germany. "A more linear RF signal is very important, and with very low current drain, we can reduce a system's thermal dissipation. The TriQuint team has offered us great support."
TriQuint's two new amplifiers are ideal for 3G/4G wireless infrastructure applications including base transceiver stations, repeaters, boosters, tower-mounted amplifiers (TMAs), remote radio heads, defense/ aerospace and other wireless systems requiring high linearity and gain with low power consumption.
TriQuint's base station, microwave and defense/aerospace innovations will be displayed at the IEEE IMS / MTT-S Conference and Exhibition (June 5-10, Baltimore, Maryland.) Visit TriQuint at Booth #2218, or request a meeting with our experts at: info-networks@tqs.com. For information about future product releases and to subscribe to our newsletter, visit www.triquint.com/rf.
*Source: 2011 Cisco Visual Networking Index
Technical Details
TQP7M9101
0.25W high-linearity amplifier.
Performance at 2.1 GHz:
17.5 dB gain, 40 dBm OIP3 & 24.8 dBm P1dB while consuming only 88 mA current from a 5V supply.
Integrated RF over-drive, DC over-voltage and Class 2 (2000V) HBM ESD protection.
TQP7M9102
0.5W high-linearity amplifier.
Performance at 2.1 GHz:
17.8 dB gain, 43.5 dBm OIP3 & 27.5 dBm P1dB while consuming only 137 mA current from a 5V supply.
Integrated RF over-drive, DC over-voltage and Class 2 (2000V) HBM ESD protection.
For more information visit the company’s website by clicking the link below our logo on this page.