HMC668LP3E and HMC669LP3E
![hmc668lp3_hmc669lp3_L.jpg](http://www.microwavejournal.com/ext/resources/BGProducts/e/a/hmc668lp3_hmc669lp3_L.jpg?1612490478)
The HMC668LP3E and the HMC669LP3E are GaAs pHEMT MMIC Low Noise Amplifiers which are rated from 700 to 1200 MHz and 1700 to 2200 MHz, respectively. These compact LNA MMICs feature an integrated LNA bypass path which makes them ideal for infrastructure and subscriber applications where received signal strengths can vary significantly over time. A single CMOS compatible control line is used to switch between LNA mode, and a low loss bypass mode. In the event of a DC power failure, the failsafe bypass mode is enabled automatically.
The HMC668LP3E and HMC669LP3E MMIC LNAs deliver up to 17 dB gain and +33 dBm output IP3, with noise figure as low as 0.9 dB in LNA mode. These versatile LNAs are internally matched, and are housed in pin compatible and RoHS compliant 3x3 mm QFN SMT packages. Both LNAs operate from either a +3V or +5V bias supply.