GREENSBORO, N.C., Jun 22, 2010 (GlobeNewswire via COMTEX News Network) -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced availability of the RF5616, a highly integrated 4.9 GHz - 5.8 GHz (ISM band) 3mm x 3mm power amplifier designed to significantly reduce customers' total solution size and cost. The RF5616 is targeted for high-performance mobile PC and embedded applications including access points, gateways, DSL routers, wireless high definition interface (WHDI), and WLAN for wireless video distribution networks.

The RF5616 features a fully matched product design (input/output) and integrated low pass filtering to require only two external bypass components. The RF5616 includes an integrated three-stage PA that provides high gain -- an industry-first for 5GHz band front ends, as well as best-in-class efficiency and a wide range of voltage supply levels (3.0 to 5.0V), enabling high linear output power of 18dBm to 21dBm. The RF5616 also features an interstage power detector, reducing sensitivity to voltage supply, temperature extremes and VSWR while improving accuracy of the closed loop power control. Additionally, a variable linearity mode control enables two modes of operations -- a maximum output power and linearity mode, or a more efficient lower output power mode, with a single control pin. Finally, integrated harmonic attenuation eliminates the need for additional filtering, therefore optimizing the efficiency and maximizing output power at the transmit port.

A direct-to-battery connection eliminates the need for additional DC circuitry, while integrated input and output matching eliminates the need for additional RF matching. The RF5616 is fully tested and available in an industry-leading 3 mm x 3 mm leadless QFN package with backside ground.

Availability and Pricing
The RF5616 is available immediately and volume pricing begins at $0.92.

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