May 31, 2007, Houston, Texas - Mimix Broadband, Inc. introduces today a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) wide band buffer amplifier with on-chip drain bias coil and DC blocking. Using 0.30 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the buffer amplifier covers the 2 to 18 GHz frequency bands and has a small signal gain of 9 dB with a noise figure of 4.5 dB across the band. Identified as the CMM4000-BD, this device also achieves +19 dBm P1dB compression point and is well suited for fiber optic, microwave radio, military, space, telecom infrastructure, test instrumentation and VSAT applications. "The CMM4000-BD is well suited as a buffer stage for wide bandwidth applications," stated Jeff Kovitz, Senior Product Manager, Mimix Broadband, Inc. "The device is a single supply distributed amplifier with integrated bias coil, providing excellent input and output match coupled with a flat gain response across frequency. Solid performance over temperature makes this device an ideal addition to any multi-stage amplifier application." Mimix performs 100% on-wafer DC testing and 100% RF wafer qualification, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide rugged parts with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. Production quantities are available today from stock. Technical support is also available from Mimix's applications engineers at 281.988.4600. The datasheet and additional product information can be obtained from the Mimix Broadband website at www.mimixbroadband.com.