gan-on-si | Microwave Journal

Finwave Semiconductor and GlobalFoundries Partner on RF GaN-on-Si Technology for Cellular Handset Applications

August 29, 2024

Finwave Semiconductor, Inc. announced a technology development and licensing agreement with GlobalFoundries focusing on volume production of Finwave's E-mode MISHEMT technology to at GF’s 200 mm semiconductor manufacturing facility in Burlington, Vt.

RF GaN: Telecom Infrastructure Takes the Lead

June 21, 2023

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Yole Intelligence releases its annual RF GaN report, providing an overview of the market and the players in the various segments, along with their product ranges and technologies.

IGaN Achieves Low-Conduction Loss with 150 mm GaN-on-Si Epiwafer for RF Applications

Findings pave the way for commercialisation of RF Epistack on 200 m substrates to be commercially available end Q1 2021

October 26, 2020

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IGaN’s technology has the unique advantage of achieving very low conduction loss meeting the industry standards for GaN HEMT on Si for RF applications. Recently processed IGaN's 150 mm GaN on Si HEMT wafers have achieved a conduction loss of 0.15 dB at room temperature and 0.23 dB at high temperature for an operating frequency of 10 GHz.

GaN-on-Diamond: The Next GaN

May 12, 2014

F. Ejeckam, D. Francis, F. Faili, F. Lowe, J. Wilman, T. Mollart, J. Dodson, D. Twitchen and B. Bolliger, Element Six Technologies and D. Babic, University of Zagreb

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Nitronex qualifies rugged NPT1015 transistor

May 29, 2013

Nitronex

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Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets, has fully-qualified the robust NPT1015 transistor. The NPT1015 is a 28V, DC to 2.5 GHz, 50 W power transistor with 15 dB saturated gain and 65% peak drain efficiency at 2 GHz.

ON Semiconductor joins imec’s GaN-on-Si research program

October 9, 2012

ON Semiconductor

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ON Semiconductor, a premier global supplier of high performance silicon solutions for energy efficient electronics, has joined the multi-partner, industrial research and development program at imec, a leading nanoelectronics research center, to collaborate on the development of next-generation Gallium Nitride (GaN) on silicon (Si) power devices.

Nitronex awarded Phase I SBIR from NASA

April 26, 2012

Nitronex

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Nitronex has been awarded a Phase I SBIR to develop a highly efficient 20W X-band GaN power amplifier MMIC for use in long range RF telecommunications. Since 2005, Nitronex has won 16 government contract awards that have funded the development of materials, devices, discretes, MMICs, and process technologies, as well as manufacturing maturation.

Items Tagged with 'gan-on-si'

ARTICLES

Finwave Semiconductor and GlobalFoundries Partner on RF GaN-on-Si Technology for Cellular Handset Applications

RF GaN: Telecom Infrastructure Takes the Lead

IGaN Achieves Low-Conduction Loss with 150 mm GaN-on-Si Epiwafer for RF Applications

GaN-on-Diamond: The Next GaN

Nitronex qualifies rugged NPT1015 transistor

ON Semiconductor joins imec’s GaN-on-Si research program

Nitronex awarded Phase I SBIR from NASA