Items Tagged with 'SiC'

STMicroelectronics and MACOM have announced the successful production of RF GaN-on-Si prototypes. 

Richardson RFPD Inc. announced the availability and full design support capabilities for a new 2W GaN driver amplifier from Qorvo. The TGA2958-SM is a packaged Ku-Band amplifier fabricated on Qorvo’s 0.15um GaN on SiC production process (QGaN15). Operating over a 13 to 18 GHz bandwidth, the TGA2598-SM delivers 2W of saturated output power with 20 dB large signal gain and > 25 percent power added efficiency. 

Qorvo Inc., a leading provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications, announced it has successfully scaled its proprietary QGaN25 gallium nitride (GaN) on silicon carbide (SiC) process to produce monolithic microwave integrated circuits (MMICs) on six-inch wafers. The transition from 4-inch to 6-inch wafers is expected to approximately double Qorvo's GaN on SiC manufacturing capacity and favorably impact manufacturing costs – significantly accelerating the affordable manufacture of RF devices.

Cree Inc., a market leader in silicon-carbide (SiC) power and RF products announced the acquisition of APEI, a global leader in power modules and power electronics applications. Combining two highly complementary innovators, the acquisition enables Cree’s Power and RF business to extend its leadership position and help to accelerate the market for high-performance, best-in-class SiC power modules.