Items Tagged with 'electron'

Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has extended its family of 50 V discrete GaN high electron mobility transistor (HEMT) die with the release of three new components.

Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has introduced the industry’s first GaN transistor for tropospheric scatter (troposcatter) communications applications rated for 200 W continuous wave (CW) and 4.4 to 5.0 GHz operation.

 Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has developed a family of 50 V discrete GaN high electron mobility transistor (HEMT) die for operation up to 6 GHz.  

While microwave and millimeter wave high-power vacuum electron devices (VEDs) remain “below the radar” of many industry observers, the total available market (TAM) for this segment is nearly $1 billion in 2012.