Company Profile
CERNEX INC., is a company with a commitment to product excellence and technological expertise in state-of-the art thin-film hybrid and discrete microwave and millimeter-wave components, and sub-assemblies. Our company was established to provide products and services to growing markets such
Our goal is to achieve the highest quality performance, reliability, service and on-time delivery. This goal has allowed our company to maintain a steady grow over the past few years.
Our management team consists of a team of senior design engineers and sales/marketing staff with over 150 man-years of experience in the microwave and millimeter-wave businesses.
Location:
Cernex Inc.
1710 Zanker Rd. Ste 103
San Jose CA 95112-4219
United States
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Cernex's CBP series amplifiers are designed for use in a wide range of general purpose applications such as laboratory test equipment, instrumentation and other applications requiring high power output. Reliable operation is achieved using rugged stripline circuit construction with selected GaAs FET devices. Coverage from 0.1 to 46 GHz (Octave/Multi-octave) and up to 50 W output power at 1 dB compression point.
Cernex's CBF series bandpass filter is primarily used for narrowband applications. Passbands are typically from 1 to 4%. The CBF series bandpass filter can be designed from 3 to 170 GHz up to 30% bandwidths in 16 waveguide bands. Insertion losses are typically 0.8 to 2.0 dB depending upon rejection levels.
Cernex CBG series bias tuned Gunn oscillators are offered to cover the frequency range of 10 to 140 GHz in ten waveguide bands. These oscillators utilize either GaAs or InP high performance Gunn diodes and combine various cavity configurations and rich design experience to deliver moderate output power directly at high microwave and millimeter wave frequencies.
Cernex’s CBP series amplifiers are designed for use in a wide range of general purpose applications such as laboratory test equipment, instrumentation and other applications requiring high power output. Reliable operation is achieved using rugged strip line circuit construction with selected GaAs FET devices.