C.S. Whelan, P.F. Marsh, W.E. Hoke, S.M. Lardizabal, R. Leoni III, K.C. Hwang and T.E. Kazior

Articles by C.S. Whelan, P.F. Marsh, W.E. Hoke, S.M. Lardizabal, R. Leoni III, K.C. Hwang and T.E. Kazior

Metamorphic Transistor Technology for RF Applications

Detailed review of the material properties, processing, and device and amplifier performance of metamorphic HEMTs

April 1, 2001

C.S. Whelan, P.F. Marsh, W.E. Hoke, S.M. Lardizabal, R. Leoni III, K.C. Hwang and T.E. Kazior

TECHNICAL FEATURE Metamorphic Transistor Technology for RF Applications C.S. Whelan, P.F. Marsh, W.E. Hoke, S.M. Lardizabal, R. Leoni III, K.C. Hwang and T.E. Kazior Raytheon RF Components Andover, MA T he need for bandwidth, driven primarily by the explosive demand for information transfer and communication services, has necessitated the...