Articles by Exodus Advanced Communications, Las Vegas, Nev.

4M26ProdImgx250

10 W, 32 to 40 GHz, GaAs FET Power Amplifier

Solid-State High Power Module: AMP3060

Exodus Advanced Communications has introduced its latest solid-state high power module, the AMP3060. This linear, GaAs FET hybrid, Class AB design provides 10 W output across 32 to 40 GHz, with a minimum power gain of 40 dB and 4 dB peak-to-peak maximum flatness when driven with a constant maximum input power of 0 dBm. The AMP3060 is suitable for EMI/EMC susceptibility, millimeter wave component testing, electronic warfare, Ka-Band satellite and general communications applications. 


Read More
Exodus Image AMP1136 pic 2 march

VHF/UHF Amplifier Model: AMP1136

Exodus Advanced Communications announced the release of its VHF/UHF amplifier model AMP1136, a new 20 to 1000 MHz, 200 W Min CW LDMOS module. It features instantaneous bandwidth with 3 dB peak-to- peak flatness and 24 A max consumption operating from a 32 VDC source. This unit is suitable for all single channel modulations standards and has built in protection circuits. 


Read More
AMP3095

State Of The Art Ruggedized Power Amplifier: AMP3095

Exodus Advanced Comm. announced the release of a state of the art ruggedized power amplifier. AMP3095 is our 31 to 40 GHz, 5 W Min broadband module, featuring a Class AB linear GaAsFET hybrid design. It operates from a 9 VDC supply at 16 A with gain flatness of 8.0 dB Max peak to peak. With instantaneous wide bandwidth, built-in protection circuits and high reliability the AMP3095 is suitable for all single channel modulation standards and applications. 


Read More

2 to 6 GHz Frequency Range Amplifier: AMP1049A

AMP3033 sideExodus introduces the AMP1049A module covering the entire instantaneous 2 to 6 GHz frequency range at 40 W CW minimum and 50 W CW typical with flatness of less than 4 dB peak to peak. Also designed to use with all single channel modulation standards and applications requiring high power and ultra-wide band coverage. It has built-in protection circuits, high reliability and ruggedness.


Read More

Amplifier: AMP1122

Amplifier: AMP1122Exodus introduces the AMP1122 module which covers the 6 to 18 GHz frequency range instantaneously at 60 W CW typical saturated output power with a flatness of 5 dB peak to peak. Consuming 27 Amp typical and operating from a 32 VDC source this module is perfect for EW and EMI/RFI applications. This module is designed for use with any high power application requiring ultra-wide band coverage.


Read More

VHF/UHF Amplifier: AMP1136

Exodus Image AMP1136 pic 2Exodus Advanced Communications is pleased to announce the release of its VHF/UHF amplifier model AMP1136, a 20 to 1000 MHz, 200 W Min CW LDMOS module. It features instantaneous bandwidth with 3.0 dB peak to peak flatness and 24 A max consumption operating from a 32 VDC source. This unit is suitable for all single channel modulations standards and has built in protection circuits.


Read More

Ultra-Broadband High Power Amplifier: AMP2084

exodus image AMP2084

AMP2084 ultra-broadband high power amplifier system covering the full 6 to 18 GHz frequency range at 80 W Min / 100 W typical and featuring Class AB linear GaN design, gain of 50 dB and less than 4 dB p-p power flatness all in a 5 U standard rack chassis. Operating from a 180 to 240 VAC power source, the AMP2084 has built-in protection circuits and is suitable for all single channel modulations standards.


Read More

Solid-State RF Amplifier Module: AMP1071

AMP1071 sideExodus introduces the AMP1071, a solid-state RF amplifier module covering the entire ultra-wide 2.0 to 20.0 GHz frequency range instantaneously at 20 W CW minimum. Using State of the Art GaN devices, the AMP1071 operates from a 32 VDC source at less than 10 A consumption. This module is suitable for use with all single channel modulation standards and applications requiring high power and ultra-wide band coverage.


Read More

Module AMP1064

AMP 1064 sideExodus introduces the AMP1064 module covering the entire instantaneous 20 to 6000 MHz frequency range at 20 W CW minimum and 25 W CW typical with flatness of less than 4 dB peak to peak.  Using State of the Art GaN devices and operating from a 50 VDC source at less than 3 Amp consumption this module is suitable for use with all single channel modulations standards and applications requiring high power and ultra-wide band coverage.


Read More