ARTICLES

GaN Low-Noise Amplifier: CMD219C4

CM_219_CMYK_PrintCustom MMIC is pleased to announce the addition of the CMD219C4, a new GaN low-noise amplifier. The CMD219C4 is a broadband MMIC low-noise amplifier fabricated in GaN technology that operates from 4 to 8 GHz with a gain of 22.5 dB, a noise figure of 1.0 dB, and an output 1 dB compression point of +17 dBm. In terms of survivability, the CMD219C4 can withstand RF input power levels of up to 5 W without permanent damage.


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GaN Low-Noise Amplifier: CMD219

GaN Low-Noise Amplifier CMD219Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), is pleased to announce the release of the CMD219, a 4 to 8 GHz low noise amplifier (LNA) in die form, to their growing line of standard GaN amplifier products. The CMD219 has a gain of 23 dB, an output 1 dB compression point of +18 dBm, and a noise figure of 1.1 dB across its operating bandwidth.


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Low Noise GaN Amplifier: CMD218

GaN-Low-Noise-Amplifier-CMD218Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), is pleased to announce the release of the CMD218, a 5 to 9 GHz low noise amplifier (LNA) in die form. The CMD218 offers a gain of 22 dB, output of 1 dB, compression point of +19.5 dBm, and noise figure of less than 1.25 dB across the 5 to 9 GHz frequency range.


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