The HMC616LP3E, HMC617LP3E and HMC618LP3E are GaAs pHEMT MMIC Low Noise Amplifiers which are rated from 175 to 660 MHz, 550 to 1200 MHz, and 1700 to 2200 MHz, respectively. These high linearity LNA MMICs deliver up to 24 dB gain and +37 dBm output IP3, with noise figure as low as 0.5 dB.
The HMC663LC3 is a general purpose, double-balanced mixer that is housed in a 3x3 mm ceramic SMT package and can be used as an upconverter or downconverter. Optimized balun structures allow the HMC663LC3 to provide up to 42 dB of LO to RF and LO to IF isolation, while conversion loss is specified at only 8 dB across the frequency range of 6 to 12 GHz.
The HMC451LP3E is a highly efficient, GaAs PHEMT MMIC medium power amplifier which operates from 5 to 18 GHz. The amplifier provides 18 dB of gain and +21 dBm of saturated output power at 18% PAE, while consuming only 120 mA from a +5 V supply.
The HMC637 is a GaAs pHEMT MMIC Power Amplifier chip which is rated from DC to 6 GHz, and delivers 14 dB gain, +30 dBm saturated output power, and +41 dBm output IP3. The HMC637 also delivers consistent output IP3 and excellent gain flatness of ±0.6 dB across its rated bandwidth.