RFMD adds four new high linearity, low noise I/Q converters for 17 to 27 GHz applications. The two upconverters incorporate an integrated frequency multiplier (x2), LO buffer amplifier, a balanced single sideband (image rejection) mixer followed by variable gain amplifier, and DC-decoupling capacitors. The two downconverters incorporate an image rejection mixer, LO buffer amplifier, and integrated LNA. Each device is packaged in a 5 x 5mm QFN to simplify both system-level board design and volume assembly.
RFMD’s new RFVA0016 is an integrated, analog-controlled, variable gain amplifier (VGA) for broadband applications with external matching, allowing operation in all bands from 400 to 2700 MHz with a single module. It features exceptional linearity, OIP3 > 40 dBm, and provides a >30 dB gain control range.
RFMD’s new RFPA1012 GaAs HBT linear power amplifier is specifically designed for wireless infrastructure applications. Using a GaAs HBT fabrication process, this high performance single-stage amplifier achieves a high IP3/DC power ratio that operates over a broad frequency range.
RFMD’s new RFHA1006 is a wideband power amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two-way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design.
RFMD’s new RFSW6131 is a GaAs pHEMT single-pole three-throw (SP3T) switch designed for use in cellular, 3G, LTE, and other high performance communications systems. It offers a symmetric topology with excellent linearity and power handling capability, while also 3 V and 5 V positive logic compatible.
RFMD’s new RFFM7600 FEM for 2.5 to 2.7 GHz LTE/WiMAX contains a power amplifier with Tx harmonic filtering and Tx/Rx switching. RFFM7600 is provided in a 6 mm x 6 mm laminate package, incorporating surface mounted devices for filtering and matching.
The RF65x9 series of Transmit/Receive Modules integrate a complete solution in a single front-end module (FEM) for AMI/AMR and smart grid solutions. The FEMs integrate a PA, transmit (Tx) filtering, input and output switches, a Tx or receive (Rx) attenuation path, and an LNA with bypass mode.
The RFSW6131 is a GaAs pHEMT Single-Pole Three-Throw (SP3T) switch designed for use in Cellular, 3 G, LTE, and other high performance communications systems. It offers a symmetric topology with excellent linearity and power handling capability. The RFSW6131 is 3 V and 5 V positive logic compatible.
RFMD’s new Multi-Path Antenna Switch Modules offer very low insertion loss with excellent linearity performance. Each is ideal for multi-mode GSM, EDGE, UMTS, and LTE handset applications. These modules integrate low pass filtering on the GSM transmit paths, thus avoiding the need for external harmonic attenuation.