M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, today announced the newest entry in its portfolio of GaN in Plastic packaged power products. Optimized for L-Band commercial air traffic control, military radar, and long range perimeter monitoring applications at 1.2 to 1.4 GHz, MACOM’s new 2-stage, fully matched GaN in Plastic power module scales to peak pulse power levels of 100W in a 14 x 24 mm package size – delivering twice the power of comparably sized competing products.
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, announced a new GaN on SiC HEMT pulsed power transistor for civilian and military radar pulsed applications. 
MACOM's GaN on SiC HEMT power transistor for L-Band pulsed radar applications, the MAGX-001214-650L00, is a gold-metalized pre-matched GaN on silicon carbide transistor that offers the highest peak power in the industry for a single-ended power transistor optimized for pulsed L-Band radar applications.
M/A-COM Technology Solutions Inc. (“MACOM”), announced the newest entry in its portfolio of GaN in plastic power module products. Optimized for pulsed Avionics applications in the 960 to 1215 MHz band, MACOM’s new 2-stage, fully matched GaN surface mount power module scales to peak pulse power levels of 100 W in a 14 x 24 mm package size.
M/A-COM Technology Solutions announced an integrated two stage differential amplifier for DOCSIS 3.0 and 3.1 reverse path infrastructure equipment. The MAAM-011186 is designed for customers who require a highly linear variable gain amplifier (VGA) solution for network access equipment and head-ends in the hybrid fiber coax (HFC) system. This device offers 39 dB of gain and 3 dB of noise figure with 31.5 dB attenuation range.
