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Infineon Technologies has opened a new building complex in Villach, Austria for production, research and development where the focus is on designing the development and production environment according to the principles of Industry 4.0.
Infineon Technologies is working with Google’s Advanced Technology and Projects group (ATAP) to develop a sensing solution. Potential applications include wearables, IoT and automotive applications.
Infineon Technologies AG and Panasonic Corp. have announced an agreement under which both companies will jointly develop Gallium nitride (GaN) devices based on Panasonic’s normally-off (enhancement mode) GaN on silicon transistor structure integrated into Infineon’s surface-mounted device (SMD) packages. In this context Panasonic has provided Infineon with a license of its normally-off GaN transistor structure. This agreement will enable each company to manufacture high performing GaN devices. Customers will have the added advantage of having two possible sources for compatible packaged GaN power switches: a setup not available for any other GaN on silicon device so far.
Infineon Technologies AG, a leading provider of hardware-based security for cellular M2M communications, announced its new SLM 97 and SLI 97 security controller families. The new products stand out with unique features required for M2M communication in industrial as well as automotive applications such as emergency call (eCall) and vehicle-to-vehicle (V2V) communication.
Infineon Technologies, together with the German automotive supplier, Hella, has developed innovative radio frequency components for a radar sensor, which reliably monitors the blind spot in the car’s rear section.
Infineon Technologiesand United Microelectronics Corp. have announced the extension of their manufacturing partnership into power semiconductors for automotive applications.
Infineon Technologies supports Samsung’s Galaxy S5 with a total of eight RF components, including LTE Low Noise Amplifiers (LNAs), Quad LNA banks, a GPS LNA and SPDT RF switches.
Infineon Technologies has introduced the PTVA127002EV 700 W L-Band RF power transistor featuring the highest-in-industry L-Band output power (700 W) available for radar systems operating in the 1200-1400 MHz frequency range.
Infineon Technologies has opened a new building complex in Villach, Austria for production, research and development where the focus is on designing the development and production environment according to the principles of Industry 4.0.