Industry News

RSS

The Antenna Company has developed a Wi-Fi 6E MIMO antenna system, designed to increase network capacity, extend range and reduce latency in enterprise and industrial IoT networks.

Teledyne e2v is sampling beta versions of its EV12DD700 dual-channel DACs. These wide output bandwidth 12- or 8-bit data converters handle sample rates to 12 GSPS, providing the capability to generate signal waveforms in multiple frequency bands and first to operate within Ka-Band.

STMicroelectronics announced the acquisition of a French fabless company, SOMOS Semiconductor (SOMOS), specialized in RF power amplifiers (PAs) and RF front-end modules (FEM) based on the mainstream complementary metal-oxide semiconductor (CMOS) technology.

In light of the global pandemic, growing numbers of cases in Europe, and related measures imposed by the respective authorities, European Microwave Week (EuMW) organizers have decided to make EuMW 2020 a virtual event this year while simultaneously planning for the next in-person event in London in October of 2021.

Qorvo® has been selected by the U.S. government to create a state-of-the-art heterogeneous integrated packaging (SHIP) production and prototyping center for RF assemblies, a program valued at $75 million.

As soon as the iPhone 12/12 Pro were released, IFIXIT did a live video of the teardown to see which chips and components made it into the US version phone. Find out which RF modules that were identified in the teardown.

Following the deployment of higher frequencies in sub-6 GHz 5G bands, GaN demonstrated properties that exceed the existing Silicon based LMDOS technology in terms of higher bandwidth and higher power density requirements. With the emerging market opportunities, the following questions are being raised in the industry: What is the business outlook for the GaN RF market with the arrival of 5G? Which technology, GaN-on-Silicon Carbide (SiC) or GaN-on-Silicon, will more successfully grow its market? Which business models will dominate in the market? How will the GaN RF business evolve in view of the US-China tension, which is becoming more sensitive than ever?

Qualcomm Technologies, Inc. today announced a full portfolio of 5G infrastructure semiconductor platforms designed for broad deployment scenarios, ranging from macro base stations with massive MIMO to micro base stations with compact designs, to accelerate the cellular ecosystem transition toward virtualized and interoperable radio access networks (RAN)

The Open RF Association (OpenRF™) today announced its formation as an industry consortium dedicated to expanding the functional interoperability of hardware and software across multi-mode RF front end and chipset platforms into the 5G era, responding to customer demand for open architectures. Its founding members include Broadcom Inc., Intel Corporation, MediaTek Inc., Murata Manufacturing Co., Ltd., Qorvo, and Samsung.

NXP Semiconductors N.V. (NASDAQ: NXPI) today announced the grand opening of its 150 mm (6-inch) RF Gallium Nitride (GaN) fab in Chandler, Arizona, the most advanced fab dedicated to 5G RF power amplifiers in the United States. The new internal factory combines NXP’s expertise as the industry leader in RF power and its high-volume manufacturing know-how, resulting in streamlined innovation that supports the expansion of 5G base stations and advanced communication infrastructure in the industrial, aerospace and defense markets.