We use cookies to provide you with a better experience. By continuing to browse the site you are agreeing to our use of cookies in accordance with our Privacy Policy.
RFMD’s newest power integrated circuit (PowerIC) broadband power amplifier (PA), operates over a very wide range of microwave frequencies, making it ideal for multiple band and broadband applications.
Skyworks’ new high performance, monolithic, digitally programmable low-pass filters – the SKY73201-364LF for single bands and SKY73202-364LF for dual bands -- are configured as 6th order Butterworth to provide extremely high stop-band isolation while maximizing pass-band flatness and minimizing group delay distortion.
RFMD introduces the RF393X family of 48V gallium nitride (GaN) power transistors. Offering enhanced performance from 10W to 120W and very wide tunable bandwidth, this portfolio of 48V GaN transistors demonstrates the superior combination of high power and bandwidth offered by RFMD’s GaN technology versus competing GaAs and silicon LDMOS technologies.
RFMD’s family of gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) low-noise amplifiers (LNAs), the RF386X, offer capabilities from 700 to 3800 MHz and provide the best-in-class combination of low noise and high linearity performance, as compared to competing solutions.
Reactel’s 6R7-1575.42-X15N11 is a highly selective notch filter. This unit is centered at the GPS frequency of 1575.42 MHz and has a nominal 3 dB bandwidth of 15 MHz. The notch depth is greater than 75 dB at CF ±1 MHz.
RSS
RFMD’s newest power integrated circuit (PowerIC) broadband power amplifier (PA), operates over a very wide range of microwave frequencies, making it ideal for multiple band and broadband applications.
RFMD introduces the RF393X family of 48V gallium nitride (GaN) power transistors. Offering enhanced performance from 10W to 120W and very wide tunable bandwidth, this portfolio of 48V GaN transistors demonstrates the superior combination of high power and bandwidth offered by RFMD’s GaN technology versus competing GaAs and silicon LDMOS technologies.
RFMD’s family of gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) low-noise amplifiers (LNAs), the RF386X, offer capabilities from 700 to 3800 MHz and provide the best-in-class combination of low noise and high linearity performance, as compared to competing solutions.
Reactel’s 6R7-1575.42-X15N11 is a highly selective notch filter. This unit is centered at the GPS frequency of 1575.42 MHz and has a nominal 3 dB bandwidth of 15 MHz. The notch depth is greater than 75 dB at CF ±1 MHz.