SweGaN is a spin-off from Linköping University that recently announced a new GaN-on-SiC HEMT heterostructure, QuanFINE ™, built on the concept of a GaN−SiC hybrid material that combines the high-electron-velocity thin GaN with the high-breakdown bulk SiC. According to their web site, the structure is realized by the company’s unique hot-wall MOCVD process and shown good result in both high-frequency and power transistors.