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SweGaN

New Thin GaN Structure on SiC Improves RF Performance

SweGaN is a spin-off from Linköping University that recently announced a new GaN-on-SiC HEMT heterostructure, QuanFINE ™, built on the concept of a GaN−SiC hybrid material that combines the high-electron-velocity thin GaN with the high-breakdown bulk SiC. According to their web site, the structure is realized by the company’s unique hot-wall MOCVD process and shown good result in both high-frequency and power transistors. 


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Demand for SiC and GaN Propels Wolfspeed’s Growth

Reflecting strong demand for SiC and GaN, Wolfspeed’s fourth fiscal quarter (Q4) revenue grew 34 percent sequentially and 81 percent year-over-year (Y/Y) to $110 million. For the full fiscal year, Wolfspeed’s revenue was $329 million, 49 percent above the revenue achieved in fiscal 2017.


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