Amplifiers

RSS

Skyworks Solutions Inc. introduced the first in a series of ultra low current, general purpose low noise amplifiers (LNA) for diverse wireless applications including satellite receiver set-top boxes, Bluetooth® headsets, medically-prescribed hearing aids, advanced meter reading devices and 2.4 GHz wireless local area networks. These high performance LNAs deliver...

M/A-COM Technology Solutions Inc. extends its leadership position in high power semiconductors with the introduction of a new family of Gallium Nitride (GaN) RF power transistors. This new family of products targets L- and S-band pulsed radar applications and leverages M/A-COM Tech’s rich heritage of providing both standard and...

TriQuint Semiconductor has released the first members in a new family of integrated RF products that lower power consumption while protecting mobile networks from disruption and service failures. TriQuint’s newest base transceiver station (BTS) network devices join 12 other new power and filter infrastructure solutions introduced in the first...

At IMS 2011, Scintera (Booth 402) will demonstrate its latest linearization solution in a complete 5 W amplifier lineup. Scintera now has its 2nd generation power amplifier linearization solutions -- the SC1869 and SC1889 available. Based on broadly deployed and field-proven technology, the SC1869 and SC1889 expand Scintera’s power amplifier...

Cree Inc. (Booth 1925) will demonstrate the industry's first GaN HEMT MMIC high power amplifier (HPA) for satellite communication applications at IMS 2011 in Baltimore. The demonstration product offers dramatic performance improvements over existing commercially-available GaAs MESFET transistors or Traveling Wave Tube-based amplifiers. "This is the first GaN MMIC...

MTT-S IMS 2011 Exhibitor Preview: Components Suppliers View in Browser June 1, 2011 Components For more show coverage, visit: www.mwjournal.com American Technical Ceramics Booth No. 1906 ATC's new 550L ultra-broadband capacitor (UBC) has been designed and manufactured with the highest quality materials to provide reliable and repeatable ultra-broadband performance...

The International Microwave Symposium (IMS) will be held June 5-10 at the Baltimore Convention Center. IMS2011 is the largest and most prestigious IEEE microwave conference in the world, bringing together international experts to showcase the most advanced research, development and innovation in RF, microwave, millimeter-wave and terahertz technologies. IMS2011...

At IMS 2011 in Baltimore, Mitsubishi Electric Corp. (Booth 510) will present its gallium nitride high-electron mobility transistor (GaN HEMT) power amplifier for C-band satellites featuring the world's highest power-added efficiency (PAE) rating, 67 percent, an increase of more than seven points compared to conventional amplifiers. The amplifier is...