RF & Microwave Industry News

Florida RF Labs introduces Lab-Flex AF for harsh environments

Lab-Flex® AF, a modified version of the popular Lab-Flex series is now available from Florida RF Labs. This new family of cables has been enhanced to perform in typical harsh environments associated with airborne, shipboard and ground-based applications. Florida RF Labs proprietary cable assembly design utilizes a redundant sealing system to prevent water ingress in both cable and connector interfaces and it employs a very durable dielectric design which is able to withstand crushing or kinking.


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TI introduces new Bluetooth low energy solution with broad industry support

Texas Instruments Inc. (TI), leading the industry with the most complete wireless connectivity portfolio for embedded applications, announced the extension of its remote control solutions offering with a new Bluetooth® low energy advanced remote control kit. As a technology, Bluetooth low energy allows for remotes with mouse-like pointing and keyboard functionality as well as gesture-, touch- and motion-based input controls so users can take their viewing and gaming experience to the next level.


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AWR kicks off ADF 2013 this July in Asia

AWR Corp., the innovation leader in high-frequency EDA software, announced the start of its AWR Design Forum 2013 tour with a diverse schedule of dates and venues in the Asia Pacific region starting this summer. ADF is an open event at which designers of microwave and RF circuits and systems such as MMIC, RF PCB, and LTE can network and share useful information and resources pertinent to high-frequency design, discuss AWR products and technologies, and collaborate on industry issues and trends. Details are available at http://www.awrcorp.com/ADF2013.


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TriQuint Achieves Breakthrough GaN-on-Diamond Results

Enables high performance, low heat operation, significantly smaller transistors
TriQuint Semiconductor Inc. announced that it has produced the industry’s first gallium nitride (GaN) transistors using GaN-on-diamond wafersthat substantially reduce semiconductor temperatures while maintaining high RF performance. TriQuint’s breakthrough technology enables new generations of RF amplifiers up to three times smaller or up to three times the power of today’s GaN solutions.
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