RF & Microwave Industry News

RSS

The Peraso W110 chipset is targeted for WiGig® applications and includes the PRS1125 direct conversion 60 GHz RFIC and the PRS4001 baseband IC to implement the necessary functionality in the next generation IEEE 802.11ad standard for Wi-Fi networks. Incorporating a USB 3.0 system interface, the W110 chipset is ideally suited for adapters and peripherals which are expected to play a vital role as the WiGig^® ecosystem continues to develop in 2016.

Lockheed Martin has received a $302.2 million contract from the U.S. Air Force for continued production of the Joint Air-to-Surface Standoff Missile (JASSM ® ) and its Extended Range (ER) version.

Altair Semiconductor, a leading provider of LTE chipsets, announced the opening of a research and development (R&D) center in Taiwan to support the company’s technical advancement in the major Asian growth-center.

TowerJazz, the global specialty foundry leader, announced that TowerJazz Panasonic Semiconductor Co. (TPSCo), working with Keysight Technologies, has developed an Advanced Design System (ADS) interoperable PDK (process design kit), as well as a calibrated Momentum module deck on TPSCo's advanced 65nm RF CMOS platform to allow mutual customers to improve design efficiency and realize first time to market. 

The U.S. Army is fielding upgrades for its at-the-halt tactical communications network, Warfighter Information Network-Tactical Increment 1, or WIN-T Inc 1, which will increase readiness, security and capability while reducing equipment by a third for a more powerful and expeditionary current and future force.

Southwest Microwave Inc., a leading global supplier of high performance interconnect solutions, has added several new high-performance products to their line of precision adapters.

Harris Corp. has received $66 million in orders to provide a Middle East nation with Falcon III ^® wideband tactical radios and accessories as part of an overall communications modernization effort.

Mitsubishi Electric Corp. announced that it would expand its lineup of gallium nitride high electron mobility transistors (GaN-HEMTs) for use in base transceiver stations (BTS) operating in the 3.5 GHz Band of fourth generation (4G) mobile communication systems. The four new GaN-HEMTs offer output power and efficiency levels that are among the highest currently available according to company research as of December 22. Samples will be released starting February 1.

Ericsson and Apple have agreed on a global patent license agreement between the two companies. The agreement includes a cross license that covers patents relating to both companies' standard-essential patents (including the GSM, UMTS and LTE cellular standards), and grants certain other patent rights. In addition, the agreement includes releases that resolve all pending patent-infringement litigation between the companies.

COMTECH PST introduces another new Gallium Nitride (GaN) amplifier for X-Band applications. This class AB linear design operates over the full 9.0-10 GHz frequency range and is ideal for use in Phase Array Radar applications, as a TWT replacement or for a microwavecommunication link.