New Waves: Semiconductors/MMICs/RFICs
InGaP HBT/pHEMT Process This proprietary, patent-pending, commercial process integrates heterojunction bipolar transistors (HBT) with pseudomorphic high electron mobility transistors (pHEMT) on a single indium gallium phosphide (InGaP) gallium arsenide (GaAs) die. The process enables several new wireless power amplifier products including integration of power amplifiers and RF switches on...
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