This article reviews the relative merits of silicon (Si), gallium arsenide (GaAs), silicon carbide (SiC) and gallium nitride (GaN) materials and describes how the attributes of each impact the operation of microwave transistors for the generation of hi...
Many microwave radar transmitters require active devices that can produce RF output power in the order of kilowatts to even megawatts. Routinely, microwave traveling-wave tube devices are utilized for this application. However, the currently used traveling-wave tubes are inefficient, large, expensive and have suspect reliability. While semiconductor-based amplifiers in...
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