RF & Microwave Industry News

RSS

 Waltham-based Raytheon will lead a team of Massachusetts-based companies that will convert Bay State tolling to an automatic system that will allow drivers to pass through toll stations without slowing down. 

 API Technologies Corp., a leading edge provider of high performance RF/microwave, power, and security solutions for critical and high-reliability applications, announced the addition of a new multi-octave broadband amplifier, model BXHF1084, to its growing family of standard and configurable RF/microwave products. With its high frequency capabilities and one of the industry’s smallest footprints, the product offers OEMs competitive advantage and faster time to market. 

 Analog Devices, Inc. released the industry’s first software-defined radio (SDR) rapid prototyping kit with dual 2 x 2 AD9361 RF transceivers to simplify and rapidly prototype 4 x 4 multiple-input multiple-output (MIMO) wireless transceiver applications on the Xilinx® Zynq®-7000 All Programmable SoC development platforms. 

 Anritsu Corp. announced it has entered in to a Manufacturing Test License (MTL) agreement with Broadcom Corp. Through the agreement, Anritsu is able to provide certified calibration and verification test solutions to Broadcom WLAN and Bluetooth customers. 

 Rogers Corp.’s Advanced Circuit Materials Division launched ROG Mobile, a free mobile app for apple and android devices. The new app allows users to access Rogers’ calculators, including the popular MWI (Microwave Impedance) simulation tool, literature, technical papers and the ability to order samples, all while on the go with their smart phones and tablets. 

 Advanced Test Equipment Rentals (ATEC) announced an agreement with Fluke Networks to become a rental distributor of Fluke Networks products, bringing greater product availability to customers with immediate test equipment needs. 

 Cree, Inc. has made seven new GaN HEMT die available through distribution via Mouser. Manufactured on silicon carbide (SiC) substrates using a either 0.4 or 0.25 μm gate length fabrication process, the gallium nitride (GaN) high electron mobility transistor (HEMT) die exhibit superior performance properties compared to silicon (Si) or gallium arsenide (GaAs) die, including: higher breakdown voltage, higher saturated electron drift velocity, higher thermal conductivity, and higher efficiency. 

 Aeroflex Inc., a wholly owned subsidiary of Aeroflex Holding Corp., announced automated test and alignment capabilities for EF Johnson P25 radios on the Aeroflex 3920B Digital Radio Test Set. The new test capabilities focus on the Viking VP 600 Series. 

 Keysight Technologies, Inc. announced membership in the Korea 5G Forum, a collaborative development environment for next–generation 5G wireless communication.  

 From Knowles Capacitors comes a Wilkinson power divider from their Dielectric Laboratories (DLI) facility.  It is designed to provide in phase power splitting or combining over a broad bandwidth in low power applications.  This is achieved by application of precision thin film fabrication with integrated resistors, coupled with DLI’s high permittivity ceramic materials, to provide a high performance and repeatable design solution.