RF & Microwave Industry News

API Technologies adds high reliability, customizable broadband amplifier

 API Technologies Corp., a leading edge provider of high performance RF/microwave, power, and security solutions for critical and high-reliability applications, announced the addition of a new multi-octave broadband amplifier, model BXHF1084, to its growing family of standard and configurable RF/microwave products. With its high frequency capabilities and one of the industry’s smallest footprints, the product offers OEMs competitive advantage and faster time to market. 


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New Cree GaN HEMT die available via distribution

 Cree, Inc. has made seven new GaN HEMT die available through distribution via Mouser. Manufactured on silicon carbide (SiC) substrates using a either 0.4 or 0.25 μm gate length fabrication process, the gallium nitride (GaN) high electron mobility transistor (HEMT) die exhibit superior performance properties compared to silicon (Si) or gallium arsenide (GaAs) die, including: higher breakdown voltage, higher saturated electron drift velocity, higher thermal conductivity, and higher efficiency. 


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