Articles Tagged with ''amplifier''

Exodus Advanced Communications is a designer and manufacturer of RF solid state high power amplifiers. We feature the latest in LDMOS, GaN and GaAsFET discrete devices and hybrid Chip & Wire on ceramic substrate technologies featuring frequency ranges from 10 KHz to 40 GHz and power levels exceeding 1 KW for modules and 10 KW for systems.

Analog Devices, Inc. introduced the HMC1127 and the HMC1126 MMIC (Monolithic Microwave Integrated Circuit) distributed power amplifiers. Covering the frequency range of 2 to 50 GHz, these new power amplifier die simplify system design and improve performance by eliminating the need for RF switches between frequency bands.

Microsemi announces the AML218P4013, a new GaN power amplifier product supplied in a compact hermetic 3.5" x 1.9" x 0.45" connectorized module housing.

Richardson RFPD Inc. announced today the availability and full design support capabilities for a new GaAs power amplifier from TriQuint/Qorvo.

Comtech PST proudly introduces another new Gallium Nitride (GaN) amplifier for X-Band applications. This class AB linear design operates over the full 9 to 10 GHz frequency range and is ideal for use in Phase Array Radar applications, as a TWT replacement or for a microwave communication link.

AtlanTecRF has launched a new convenient-to-use and versatile portable test amplifier that covers the full 1 to 18 GHz frequency range.

ETL Systems has provided BAE Systems Australia with customized amplifier units.

Richardson RFPD Inc. announced the availability and full design support capabilities for a new LDMOS integrated power amplifier from Freescale.

After years as a consumer of distributed LO amplifiers, Marki Microwave has recently built a design capability for GaAs pHEMT distributed amplifiers specifically for use as LO buffer/driver amps.

MACOM designers used NI AWR Design Environment™ software inclusive of Microwave Office circuit design software, AXIEM 3D planar EM simulator, Analyst™ 3D FEM simulator, and APLAC harmonic balance (HB) simulator to successfully design and simulate a 4 W Ka-band PA using a 2 mil thick 0.15 um GaAs pseudomorphic high-electron mobility transistor (pHEMT) process.