RFHIC Corp., a manufacturer of gallium nitride and gallium arsenide active RF and microwave components and hybrid modules for telecom and broadcast markets, has introduced the RWS05020-10 power amplifier that generates 20 W and covers the 20 to 1,000 MHz frequency ranges.

The RWS05020-10 is based on gallium nitride on silicon carbide (GaN-on-SiC) transistors, providing good reliability at high temperature, as well as 36 dB of gain and a typical 43 dBm at P3dB with 50 percent efficiency. It measures 2.1 by 1 by 0.5 in.

“RWS05020-10 is a miniaturized wideband amplifier, a newly developed hybrid,” said Chief Technical Officer Samuel Cho. RFHIC has incorporated pin types for both DC and RF ports to make the product easy to use. The RWS05020-10 also has a bolted-down structure and operates at 28 V with 51 dBm at OIP3.

RFHIC maintains that, as GaN devices are actively evolving, reliability is improving while they are also becoming more cost effective. In addition, the company has been developing more thermally robust designs, and the substrate material has been migrated from silicon to silicon carbide (SiC), enhancing reliability and efficiency further, directly addressing the increasing 'green' concerns of both policy makers and end users (who are also calling for smaller systems, without sacrificing performance). In particular, for sub L-band frequencies, there are many obstacles to be overcome in order to shrink the size of power amplifiers.