M/A-COM Technology Solutions >Inc., a provider of innovative microwave and RF design solutions, is introducing three new lateral diffused MOSFET (LDMOS) devices for L-band radar and one new LDMOS device for avionics applications. The announcement was made at the 2009 Institute of Electrical and Electronics Engineers (IEEE) Microwave Theory & Techniques Symposium (MTT-S) underway in Boston, MA, June 8 to 12. These new products are an extension of M/A-COM Tech’s legendary line of bipolar L-band radar transistors.
“M/A-COM Tech’s gold-process LDMOS devices are backed with our field-proven heritage of transistors made with gold metallization wafer fabrication technology,” said Gary Lopes, Director and General Manager of M/A-COM Tech’s Power Hybrids Operation in Torrance, CA.
The first two devices are optimized for the 1030 to 1090 MHz radar segment of the band, each capable of short pulse (32 micro-seconds with two percent duty cycle), in 100 and 200 W versions. The part numbers are MAPL-001090-100BF0 (100 W) and MAPL-001090-200BF0 (200 W).
The third device is optimized for 1200 to 1400 MHz, features medium-duty cycle operation (150 micro-seconds with 10 percent duty cycle) and is rated at 100 W. The part number is MAPL-001214-100MF0.
Device number four is a 75 W device, optimized to 978 MHz for avionics applications such as Universal Access Transceiver (UAT) surveillance link applications used in Automatic Dependent Surveillance-Broadcast (ADS-B) systems operating at 960 to 1215 MHz. The part number is MAPL-000978-0075LF.
All four of these new LDMOS products are common-source, Class AB devices housed in high performance, hermetically sealed ceramic packages to ensure the highest reliability.
“These high power final amplifier components will be followed shortly by a series of compatible driver devices for a complete line-up using our gold process platform,” Lopes added.