Mimix Asia introduces an 8.5 to 11 GHz gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) core chip, which consists of integrated transmit/receive switches, an LNA, a 6-bit phase shifter, a 5-bit attenuator and a driver amplifier. This core chip, identified as XZ1002-BD, features parallel data input and compensated on-chip gate bias and delivers 21 dB RX gain, 23.5 dB transmit P1dB and 28 dBm receive OIP3. The transmit amplifier also has a typical small-signal gain of 19 dB with excellent input and output match. The XZ1002-BD is well suited for both military and weather phased-array radar applications and satellite communications systems.

"Our highly integrated X-band core chip combines four functions in one device, making a two-chip phased-array radar T/R module a reality when matched with our XP1006 10W power amplifier,” says Peter J. Hales, vice president sales, Mimix Asia. “With these two devices, active X-band phased-array and T/R module manufacturers can add an accurate, fast and inexpensive solution to their arsenal."

Mimix performs 100 percent on-wafer RF, DC and output power testing on the XZ1002-BD, as well as 100 percent visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

Engineering samples are available today from stock, and production quantities are available 14 weeks ARO.