Innovations for High Performance Microelectronics (IHP), Frankfurt, Germany, announced the availability of a leading-edge ADS process design kit (PDK) for IHP’s 0.25 µm SiGe process (SG25H3).
The PDK for IHP’s SG25H3 process technology is the result of collaboration between IHP and Agilent Technologies’ EEsof EDA division to accelerate customers’ time-to-market by offering an accurate and productive work environment for MMIC design solutions.
"The complete ADS support in our SG25H3 technology gives our MMIC customers new excellent design capabilities," said Professor Wolfgang Mehr, scientific director of IHP. "Having the complete ADS design kit, including layout tools, gives IHP and our customers the advantage of Agilent's proven expertise in microwave design. The powerful ADS simulation technology makes it easy to design ICs for applications up to 60 GHz. Our customers gain confidence about the accuracy of their designs at these high frequencies and avoid additional design cycles."
“In addition to designing high performance ICs operating at 60 GHz, our customers can also design for consistent output results and highest yield using the advanced statistical Design-for-Manufacturing (DFM) tools in ADS," said Jack Sifri, MMIC product marketing manager with Agilent’s EEsof EDA division. “The combination of ADS and the IHP’s SiGe design kits allows our mutual RF customers have access to a powerful, integrated design solution for a fast and efficient RFIC design flow.”
The IHP SG25H3 PDK, developed for use with Advanced Design System (ADS) from Agilent Technologies, enables radio frequency (RF) designers to design MMICs such as LNAs, mixers and power amplifiers. The IHP SiGe PDK includes a complete set of MOSFETs, SiGe bipolar transistors, passive components such as poly resistors, MIM capacitors and inductors, Schottky diodes and contacts. The technology contains two thick aluminum layers for high-Q passive elements. Important layout components are fully scalable and are characterized to meet the IHP technology performance. The IHP SG25H3 process design kit supports a complete ADS front-to-back design flow with full design rule check (DRC) rules.
The IHP SG25H3 0.25 µm microwave bipolar complementary metal oxide semiconductor (BiCMOS) process offers high-performance technology with SiGe heterojunction bipolar transistors (HBT) up to fT/fmax = 110 GHz /180 GHz and HBTs with higher breakdown voltages up to 7 V. The technology is suited for applications between 24 GHz and 60 GHz, making it especially useful for the designers of wireless, broadband and radar products. SG25H3 is one of a 0.25 µm and 0.13 µm BiCMOS technology set with HBTs up to 300 GHz fmax that IHP offers customers for Multi Project Wafer and Prototyping Services.
