The partnership between S.E.T. (formerly the SUSS MicroTec Device Bonder Division) and CEA Leti has resulted in a radically new generation of high accuracy (0.5 μm), high force (4,000 N) device bonder for wafer diameters up to 300 mm. The bonder includes a built-in chamber for collective reflow in a gas or vacuum environment and the system also features nanoimprinting capabilities.

CEA Leti is a laboratory of the Minatec® Innovation Center in Grenoble, France operated by the Technology Research Directorate of the French Atomic Energy Commission (CEA). This new development is just the latest to emerge from its new three-year partnership with S.E.T. Their collaboration dates back to a previous joint development effort, in 1981, which brought about the first ever commercially available flip chip bonder.

The new FC300 High Force Device Bonder is able to perform various applications on the same platform with a quick process head reconfiguration. Available initially with automatic handling of chips, templates and small size substrates, the FC300 will be further developed to include a fully automated handling of wafers up to 300 mm.