Raytheon, an RTX business, has been awarded a three-year, two-phase contract from DARPA to develop foundational ultra-wide bandgap semiconductors (UWBGS). Based on diamond and aluminum nitride technology, UWBGS will revolutionize semiconductor electronics with increased power delivery and thermal management in sensors and other electronic applications.

During phase one of the contract, the Raytheon Advanced Technology team will develop diamond and aluminum nitride semiconductor films and their integration onto electronic devices. Phase two will focus on optimizing and maturing the diamond and aluminum nitride technology onto larger diameter wafers for sensor applications.

“Raytheon has extensive proven experience developing similar materials such as GaAs and GaN for Department of Defense systems,” said Colin Whelan, president of Advanced Technology at Raytheon. “By combining that pioneering history with our expertise in advanced microelectronics, our team will mature these materials for future applications.”

The unique material properties of UWBGS offer several advantages over traditional semiconductor technologies, enabling highly compact, ultra-high power RF switches, limiters and power amplifiers. Their high thermal conductivity also enables them to operate at higher temperatures and in more extreme environments.

The team’s goal is to spearhead the development of these materials towards devices that are well suited for both existing and future radar and communication systems with extended capability and range, including cooperative sensing, electronic warfare, directed energy and circuitry in high speed weapon systems such as hypersonics.

Work on this contract is being conducted at the company’s foundry in Andover, Mass.