pSemi® Corporation, a Murata company leading in the design and development of semiconductor integration and advanced connectivity, announced the introduction of PE42447— a high power and linearity SP4T RF switch manufactured on pSemi’s advanced silicon-on- insulator (SOI) technology, now supporting frequency ranges across 10 MHz to 8 GHz. It delivers extremely low insertion loss and high linearity with high input power handling capability, making it ideal for hybrid beamforming in wireless infrastructure as well as any other applications in broad market that requires such exceptional performance.

Manufactured on pSemi’s patented next-generation UltraCMOS® technology and packaged on a 20-lead 4 × 4 mm LGA package, PE42447 features low insertion loss of 0.4 dB at 2.6 GHz and 0.5 dB at 3.8 GHz. This switch has exceptional linearity of 85 dBm IIP3, high power handling of up to 100 watts, and switching time of around 1 microsecond. Its tolerance of 115°C ambient temperature makes it ideal for applications in a rugged environment including but not limited to wireless infrastructure.

“Building on the success of our portfolio of industry-leading RF high power switches, the PE42447 expands frequency range for a broader range of applications,” says Rodd Novak, vice president of sales and marketing, pSemi. “The combination of high-power handling, high linearity and extremely low insertion loss while maintaining all the benefits of an UltraCMOS switch delivers a great solution for our customers’ needs when it comes to 5G MIMO, 4G/4.5G TD-LTE, and many other use cases.”

Samples for the PE42447 are available now and are expected to be commercially available in the second half of 2024.