Wavepia announced the latest addition to its GaN-on-SiC MMIC power amplifier (PA) family. The WPGM0618020M is a PA that operates from 6 to 18 GHz. The device has a saturated output power of 43.1 dBm, small-signal gain of 26.5 dB, power gain of 12.3 dB and PAE of 19.4 percent with all these typical values measured at 10 GHz and 28 V bias voltage. The amplifier can be operated with VDD values from 28 to 32 V.
The WPGM0618020M is available in an MPKG 10-lead bolt-down package measuring 16.94 x 7.35 x 1.4 mm. A companion part, the WPGM0618020C, comes in a leadless bolt-down package measuring 20 x 10 x 1.27 mm. The WPGM0618020C operates over the same frequency range with slightly better performance than the WPGM0618020M. Both devices target applications in a wide range of radar, electronic warfare, satellite and communication systems.
Established in 2014, WAVEPIA is an RFIC/MMIC design house based in South Korea. They design and develop a broad range of RF GaN HEMT bare die, MMICs and packaged RF GaN transistors that operate up to 40 GHz and up to 300 W. WAVEPIA also design solid-state RF generators using their GaN transistors that generate up to several kW of saturated output power for the RF energy market. They have a broad range of standard products, but all WAVEPIA devices are customizable upon request. In addition to defense, communications and RF energy applications, WAVEPIA devices find opportunities in general purpose, ISM, test and measurement, satellite and 5G/6G markets.
Wavepia
Hwaseong, South Korea
www.wavepia.com