Guerrilla RF, Inc. has finalized the acquisition of Gallium Semiconductor's entire portfolio of GaN power amplifiers and front-end modules. Effective April 26, 2024, Guerilla RF acquired all previously released components as well as new cores under development at Gallium Semiconductor. Additionally, all associated intellectual property has been transferred to GUER as part of this portfolio acquisition. By integrating these assets, the Company intends to significantly enhance its ongoing efforts to develop and commercialize a new line of GaN devices tailored for wireless infrastructure, military and satellite communications applications.

According to the Yole Group, the RF GaN device market is poised for substantial growth, projected to double from $1.3B in 2022 to $2.7B by 2028. This growth is primarily attributed to double-digit expansion within three key market segments relevant to Guerrilla RF: telecom infrastructure (including 5G and point-to-point systems), military and satellite communications, with projected compound annual growth rates of 10 percent, 13 percent and 18 percent, respectively. Moreover, the GaN on SiC variants utilized in Gallium Semiconductor's designs are forecasted to dominate this market for the next decade.

Ryan Pratt, CEO and founder of GUER, commented, “As the company continues to evolve as an RFIC and MMIC supplier, integrating GaN technology into our expanding portfolio is imperative. GaN represents a pivotal advancement towards offering comprehensive signal chains for our target markets. Prior to this acquisition, Guerrilla RF was already advancing GaN device development as part of its organic growth strategy. The acquisition of Gallium Semiconductor's portfolio significantly accelerates this strategic initiative. We anticipate this transaction will yield meaningful revenue with favorable margins in the near and long term.”

Henk Thoonen, CEO of Gallium Semiconductor, stated, “Merging these new products into Guerrilla RF’s portfolio is expected to be fast and seamless. Both companies share common foundry partners for GaN and GaAs products and target similar applications and market segments. Guerrilla RF will inherit a diverse range of released and sampling products, encompassing simple, unmatched transistors to fully integrated asymmetric Doherty PAs. With rated peak power levels ranging from 5 W to 400 W, these products complement Guerrilla RF's existing portfolio of InGaP HBT and GaAs pHEMT amplifiers which are suited for power levels of 2 W and below.”