The ADPA9007-2CHIP is a 2 W, RF power amplifier that operates from DC to 28 GHz. The RF input and output are internally matched and DC-coupled. The ADPA9007-2CHIP includes an integrated temperature-compensated RF power detector and an integrated temperature sensor.

The ADPA9007-2CHIP amplifier provides a gain of 13 dB, an output power for 1 dB compression (OP1dB) of 32.5 dBm, and an output third-order intercept (OIP3) of 43.5 dBm from 8 GHz to 16 GHz. The amplifier operates from a typical supply voltage (VDD) of 15 V and has a 500 mA typical quiescent drain current (IDQ), which is adjustable.

The ADPA9007-2CHIP is fabricated on a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) process and is specified for operation from −55°C to +85°C.

FEATURES

  • Wideband, internally matched, RF power amplifier
  • DC-coupled input and output 
  • Integrated RF power detector 
  • Integrated temperature sensor 
  • Gain: 13 dB typical at 8 GHz to 16 GHz 
  • OP1dB: 32.5 dBm typical at 8 GHz to 16 GHz 
  • PSAT: 33.5 dBm typical at 8 GHz to 16 GHz 
  • OIP3: 43.5 dBm typical at 8 GHz to 16 GHz