FABRICATION
All SAW filter variations are fabricated on a wafer from one mask. Figure 3 shows photos of the wafer and the pattern of fabricated filters. A 128-degree Y-cut LiNbO3 wafer is chosen because of its large piezoelectric coupling coefficient. First, the wafer is spin-coated with an AZ 5214E photoresist. Then, the pattern mask is mounted on the spin-coated wafer with a soft contact and exposed to UV light. Polymerization of the photoresist layer by the UV light decreases its solubility so that after washing, only the UV-exposed photoresist is left on the wafer.
The wafer with patterned photoresist is transferred to the sputtering system where 20 nm of silver and 180 nm of copper are uniformly sputtered onto the wafer disregarding the existence of the photoresist layer. The silver layer increases the adhesion of the copper.
Finally, the sputtered wafer is soaked in acetone. The photoresist layer is removed together with the metal layer from its top so that the wafer with the desired pattern remains.
The fabrication process is illustrated in Figure 4.
EXPERIMENTAL RESULTS
Figure 5 shows a filter being measured at the probe station. S-parameters (S11 and S21) are measured with a vector network analyzer.
The impact of the reflectors can be observed in Figure 6, where the filter with reflectors displays significantly better transmission performance. The filter with reflectors has a higher |S21| (about -3 dB) at the resonance peak, while without reflectors it is less than -10 dB around the peak. In Figure 6a, |S11| of both designs is almost identical. Therefore, it can be concluded that the difference in |S21| depends to a greater degree on reception versus transmission. The induced mechanical waves are reflected between the two ports by the reflectors so that the same wave is transmitted to the receive port multiple times. Therefore, the filter with reflectors provides better performance.
Measured and simulated |S21| of the SAW filter without reflectors are shown in Figure 7. The resonant frequency is shifted from 440 MHz in the simulation to 480 MHz in the measurement. The difference is attributed to the simplified 2D modeling approach of the 3D structure. However, it does provide a close prediction of |S21|.
Figure 8 shows the results of the remainder of the parametric study. Figure 8a compares |S21| of filters with different IDT overlapping lengths. A length of 20 μm is insufficient to fully activate electromechanical coupling, while 100 and 200 μm are sufficient. The measurement of lengths between 20 and 80 μm will be needed if a minimal design is desired; however, a 200 μm overlapping length shows only a slight shift in the resonance peak and broadens the bandwidth.
Figure 8b illustrates the impact of port separation on |S21|. Greater attenuation is expected with increasing separation. The filter with 800 μm in separation has about 3 dB greater attenuation than those with 100 and 200 μm. As the separation is increased to 800 μm, a wider bandwidth and a shift in the resonance peak is observed.
Both the numbers of IDTs (N) and reflectors (M) are varied independently (see Figures 8c and 8d). The number of reflectors per port is fixed to 40 when varying the number of IDTs per port and vice versa. The best performance (|S21| less than -3 dB) is achieved when M = 10 or 40. When M = 80, the peak value of |S21| drops to -10 dB. This implies that fewer reflectors are needed to effectively reflect the incident mechanical waves. An excessive number of reflectors or non-unity ratio between IDTs and reflectors appears to deteriorate performance.
The best performing SAW filter is one with 40 pairs of reflectors and IDTs per port, greater than 100 μm in IDT length and 100 μm or less of port separation. It demonstrates less than 3 dB of insertion loss and greater than 10 dB of return loss at 480 MHz without external matching elements at the ports (see Figure 9).
CONCLUSION
The investigation of the impact of SAW features on performance is demonstrated through an in-house fabrication capability to manipulate detailed features with a short design-fabrication-measurement-redesign cycle. An entire design-fabrication-measurement procedure is established and serves as a foundation to meet future requirements for sensing and telecommunication components.
ACKNOWLEDGMENT
This work was supported by the Internal Research Grant and The Dean’s Research Fund of the Faculty of Liberal Arts and Social Sciences from the Education University of Hong Kong (Project No: R4348 and FLASS 04717) and an IEEE-MTTS undergraduate scholarship. The fabrication facilities were provided by the University Research Facility at The Hong Kong Polytechnic University (PolyU). The measurements were carried out of Dr. Mung’s laboratory.
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