Qorvo announced a 20 W GaN-on-SiC power amplifier (PA) for defense and commercial satellite applications, including low Earth orbit constellations. Qorvo’s QPA1724 amplifier operates at 17.3 to 21.2 GHz (Ku-/K-Band) and offers twice the power of competing PAs, along with excellent wideband linear power, gain and power-added efficiency in a compact surface mount package. The market-leading QPA1724 is optimized for wide bandwidth multi-carrier high data throughput satellite applications.
Dean White, senior director of Defense and Aerospace Market Strategy at Qorvo, said, “Qorvo is a pioneer in developing high performance mmWave solutions for satellite communication systems. The QPA1724 is a breakthrough device for both commercial and defense markets. At 20 W saturated power, the QPA1724 offers twice the power of alternative PAs and leads the market in RF performance.”
Key Features
- Frequency Range: 17.3 to 21.2 GHz
- PSAT (PIN = 27 dBm): 43 dBm
- PAE (PIN = 29 dBm): 27 percent
- Small Signal Gain: 25 dB
- Bias: VD = 20 V
- Dimensions: 7.5 x 6 x 1.6 mm
The QPA1724 is available now and is lead-free, RoHS compliant and 100 percent DC and RF tested to ensure compliance with electrical specifications.
Qorvo offers the industry’s largest, most innovative GaN-on-SiC portfolio to help customers realize superior efficiency and operational bandwidth. The company’s GaN-on-SiC products deliver high power density, reduced size, excellent gain, high reliability and process maturity. Qorvo is a leading supplier of RF products and compound semiconductor foundry services to the defense industry and has achieved a Manufacturing Readiness Level 10 (MRL 10) rating with the U.S. Department of Defense for its GaN technology.