RFMW announced design and sales support for a GaN transistor from Ampleon. The CLF3H0060-30U is a 30 W, unmatched, broadband, GaN-SiC HEMT transistor usable for both CW and pulsed, general purpose applications in frequency ranges from DC to 6.0 GHz. The device utilizes a thermally enhanced package with low thermal resistance providing excellent ruggedness. Designed for broadband operation, the CLF3H0060-30U features high efficiency. Large signal models in ADS and MWO are available for this RoHS compliant device.
Broadband RF Power GaN HEMT from Ampleon
GaN Transistor: CLF3H0060-30U
![RFMW-1-26-22wjt.jpg](http://www.microwavejournal.com/ext/resources/2022/01/27/RFMW-1-26-22wjt.jpg?1643290240)