RFMW announced design and sales support for a dual-path, GaN transistor. Supporting 20  or 40 W designs, Qorvo’s QPD0211 has two transistors housed in a 7 x 6 mm plastic package. This dual-path discrete GaN on SiC HEMT, single-stage power transistor operates from 2.5 to 2.7 GHz. Applicable for asymmetric Doherty applications in 5G massive MIMO BTS, it can deliver PAVG of 7.6 W at +48 V operation. Device gain is 14.5 dB. The QPD0211 also supports active antennas and may be used as a macro, base station driver.