Timed with the 2019 International Microwave Symposium, pSemi announced the release of UltraCMOS® 13, the next-generation of its proprietary RFSOI process running on GlobalFoundries’ 300 mm wafer fab. UltraCMOS 13 was tailored to improve low noise amplifier (LNA) and power amplifier (PA) performance and enable improved performance from integrated front-end components.

pSemi pioneered UltraCMOS technology more than thirty years ago, displacing GaAs PHEMT as the preferred process for the switches in mobile phones. Each generation of UltraCMOS has improved the R_onC_off figure of merit, the key performance metric for RF switches. Lowering R_on lowers the insertions loss, and reducing C_off improves switch isolation when the switch is off. UltraCMOS 12, introduced in January 2017, achieved an R_onC_off of 80 fs.

UltraCMOS 13 maintains the R_onC_off and Fmax performance of the prior generation while lowering the NFmin for LNAs, reducing FET leakage current for PAs, increasing the power handling of switches and optimizing support for on-chip 1.2 V analog and digital circuit functions.

Jim Cable, CEO of pSemi, said the UltraCMOS 13 process will enable pSemi designers to provide highly integrated and differentiated products, initially targeting sub-6 GHz 5G NR LNAs, PAs, switches and integrated front-ends.

pSemi, formerly Peregrine Semiconductor), is a subsidiary of Murata, developing standard product RFICs and custom designs used in Murata’s integrated products.