Ampleon announced it will participate in the IEEE International Microwave Symposium (IMS2019) held in Boston, Mass. to introduce its wide variety of new LDMOS and GaN solutions targeting telecom, aerospace and defence, NCC, ISM, cooking and defrosting applications.
At the Ampleon Booth 672, visitors will be shown the most recent technology innovations and new product introductions with many highlights including Ampleon’s:
- Ground-breaking solutions for 4G and 5G mobile broadband radio networks, offering the industry’s best compromise between performance, power consumption, cost and size and delivering the best efficiency from massive MIMO active antennas up to high-power RF power amplifiers
- A new line of 65 V Advanced Rugged Transistors (ART) designed to unlock so far untapped levels of extreme ruggedness and extra-high breakdown voltages
- Next generation of easy-to-use radar and wideband GaN transistors enabling highest efficiency architectures
- Industry leading portfolio of transistors, highly integrated low-cost pallet modules and multi-kilowatt system reference designs tailored for industrial, cooking and defrosting applications at 433 MHz, 915 MHz and 2.4 GHz
- Latest Avionics, L- and S-Band LDMOS radar transistors based upon the 9th generation technology, pushing the limit of LDMOS power density to enable best-in-class efficiency figures at a well optimized cost structure.
Senior members of the Ampleon team will also present technical papers at the conference as follows:
- Thursday June 6, 1.30 p.m., IMS2019 Interactive Forum Area
- A 10 W Fully-integrated LDMOS MMIC Doherty in LGA Package for 2.7 GHz Small Cell Applications (Paper ID 266-KW401) - Levin Lin, team leader, Shanghai design & development team.
- Thursday, June 6, 10:10 a.m., IMS2019 Interactive Forum Area,
- A 750 W High Efficiency LDMOS New Four-way Doherty Amplifier for Base-Station Applications (Paper ID 266-FD431) - Binghui (Brian) Zhang, Application Director, Xiaochun (Mike) Jiang, Sr. Principal Application Engineer.